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*R oH V SC AV ER OM AI SIO PL LA N IA BL S NT E
TISP61511D DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
TISP61511D Gated Protectors
Dual Voltage-Programmable Protectors. - Wide 0 to -80 V Programming Range - Low 5 mA max. Triggering Current - High 150 mA min. Holding Current Rated for International Surge Wave Shapes
Voltage Wave Shape 2/10 s 1.2/50 s 0.5/700 s 10/700 s 10/1000 s Standard TR-NWT-001089 ETS 300 047-1 RLM88/I3124 K17, K20, K21 TR-NWT-001089 ITSP A 170 90 40 40 30
D Package (Top View)
(Tip)
K1 NC
1 2 3 4
8 7 6 5
K1 (Tip) A A (Ground) (Ground)
(Gate) G (Ring) K2
K2 (Ring)
MD6XANB
NC - No internal connection Terminal typical application names shown in parenthesis
Device Symbol
K1 G K2
Functional Replacements for
Functional Replacement With Standard Package Termination Finish De vice Type Type Order As
LCP1511, LCP1511D , ATTL7591AS, M GSS150- 1 8-pin SmallOutline TISP61511D or TISP61511DR for Taped and Reeled
Functional Replacement With Lead Free Termination Finish Order As
TISP61511D-S or TISP61511DR-S for Taped and Reeled
A
SD6XAE
.............................................. UL Recognized Component
Description
The TISP61511D is a dual forward-conducting buffered p-gate overvoltage protector. It is designed to protect monolithic Subscriber Line Interface Circuits, SLICs, against overvoltages on the telephone line caused by lightning, ac power contact and induction. The TISP61511D limits voltages that exceed the SLIC supply rail voltage. The SLIC line driver section is typically powered from 0 V (ground) and a negative voltage in the region of -10 V to -70 V. The protector gate is connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. As the protection voltage will track the negative supply voltage the overvoltage stress on the SLIC is minimized.
Terminals K1, K2 and A correspond to the alternative line designators of T, R and G or A, B and C. The negative protection voltage is controlled by the voltage, VGG, applied to the G terminal.
Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then the protector will crowbar into a low voltage on-state condition. As the current subsides the high holding current of the crowbar prevents d.c. latchup. These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system operation they are virtually transparent. The buffered gate design reduces the loading on the SLIC supply during overvoltages caused by power cross and induction.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex JULY 1995 -- REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
Absolute Maximum Ratings
Rating Repetitive peak off-state voltage, VGK = 0, -40 C TJ 85 C Repetitive peak gate-cathode voltage, VKA = 0, -40 C TJ 85 C Non-repetitive peak on-state pulse current (see Notes 1 and 2) 10/1000 s 5/310 s 0.2/310 s 1/20 s 2/10 s Non-repetitive peak on-state curr ent, 50 Hz (see Notes 1 and 2) full-sine-wave, 20 ms 1s Non-repetitive peak gate current, half-sine-wave, 10 ms (see Notes 1 and 2) Junction temperatur e Storage temperature range IGSM TJ Tstg ITSM 5 3.5 2 -55 to +150 -55 to +150 A C C A TJ = -40 C TJ = 25 C, 85 C ITSP 30 40 40 90 120 170 A Symbol VDRM VGKRM Value -100 -85 Unit V V
NOTES: 1. Initially the protector must be in thermal equilibrium with -40 C TJ 85 C. The surge may be repeated after the device returns to its initial conditions. See the applications section for the details of the impulse generators. 2. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair). Above 85 C, derate linearly to zero at 150 C lead temperature.
Recommended Operating Conditions
Component CG Gate decoupling capacitor Min Typ 220 Max Unit nF
Electrical Characteristics, TJ = 25 C (Unless Otherwise Noted)
Parameter ID V(BO) VGK(BO) Off-state current Breakover voltage Gate-cathode voltage at breakover On-state voltage Forward voltage Peak forward recovery voltage VD = -85 V, VGK = 0 Test Conditions TJ = 25 C TJ = 70 C Min Typ Max 5 50 -58 10 20 25 3 4 3 5 5 7 12 V V V V Unit A A V
IT = 30 A, 10/1000 s, 1 kV, RS = 33 , di/dt(i) = 8 A/s (see Note 3) IT = 30 A, 10/700 s, 1.5 kV, RS= 10 , di/dt (i) = 14 A/s (see Note 3) IT = 30 A, 1.2/50 s, 1.5 kV, RS= 10 , di/dt (i) = 70 A/s (see Note 3) IT = 38 A, 2/10 s, 2.5 kV, RS= 61 , di/dt (i) = 40 A/s (see Note 3) IT = 0.5 A, tw = 500 s IT = 3 A, t w = 500 s IF = 5 A, t w = 500 s IF = 30 A, 10/1000 s, 1 kV, RS = 33 , di/dt(i) = 8 A/s (see Note 3) IT = 30 A, 10/700 s, 1.5 kV, RS= 10 , di/dt (i) = 14 A/s (see Note 3) IT = 30 A, 1.2/50 s, 1.5 kV, RS= 10 , di/dt (i) = 70 A/s (see Note 3) IT = 38 A, 2/10 s, 2.5 kV, RS= 61 , di/dt (i) = 40 A/s (see Note 3)
VT VF
VFRM
NOTE
3: All tests have CG = 220 nF and VGG = -48 V. RS is the current limiting resistor between the output of the impulse generator and the R or T terminal. See the applications section for the details of the impulse generators.
JULY 1995 -- REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
Electrical Characteristics, TJ = 25 C (Unless Otherwise Noted) (Continued)
Parameter IH IGAS IGT VGT CAK Holding current Gate reverse current Gate trigger current Gate trigger voltage Anode-cathode offstate capacitance Test Conditions IT = 1 A, di/dt = -1A /ms, VGG = -48 V VGG = -75 V, K and A terminals connected IT = 3 A, t p(g) 20 s, VGG = -48 V IT = 3 A, t p(g) 20 s, VGG = -48 V f = 1 MHz, Vd = 1 V, IG = 0, (see Note 4) VD = -3 V VD = -48 V TJ = 25C TJ = 70C 0.2 Min 150 5 50 5 2.5 100 50 Typ Max Unit mA A A mA V pF pF
NOTE
4: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter RJA Junctio n to free air thermal resistance Test Conditions Ptot = 0.8 W, TA = 25C 5 cm 2, FR4 PCB D Package Min Typ Max 170 Unit C/W
JULY 1995 -- REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
Parameter Measurement Information
+i IFSP (= |ITSP|) Quadrant I Forward Conduction Characteristic
IFSM (= |ITSM|) IF VF VGK(BO) VGG VD ID
-v
+v
I(BO) IS
IH VT IT ITSM
V(BO)
VS
Quadrant III Switching Characteristic ITSP -i
PM6XAAA
Figure 1. Voltage-Current Characteristic
JULY 1995 -- REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
Thermal Information
MAXIMUM NON-RECURRING 50 Hz CURRENT vs CURRENT DURATION
TI6LAA
ITRMS - Maximum Non-Recurrent 50 Hz Current - A
VGEN = 250 Vrms RGEN = 10 to 150 10
1 0*1
1
10
100
1000
t - Current Duration - s
Figure 2.
JULY 1995 -- REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
DEVICE PARAMETERS
General
Thyristor based overvoltage protectors, for telecommunications equipment, became popular in the late 1970s. These were fixed voltage breakover triggered devices, likened to solid state gas discharge tubes. As these were new forms of thyristors, the existing thyristor terminology did not cover their special characteristics. This resulted in the invention of new terms based on the application usage and device characteristic. Initially, there was a wide diversity of terms to describe the same thing, but today the number of terms have reduced and stabilized. Programmable, (gated), overvoltage protectors are relatively new and require additional parameters to specify their operation. Similarly to the fixed voltage protectors, the introduction of these devices has resulted in a wide diversity of terms to describe the same thing. To help promote an understanding of the terms and their alternatives, this section has a list of alternative terms and the parameter definitions used for this data sheet. In general, the Bourns approach is to use terms related to the device internal structure, rather than its application usage as a single device may have many applications each using a different terminology for circuit connection.
Alternative Symbol Cross-Reference Guide
This guide is intended to help the translation of alternative symbols to those used in this data sheet. As in some cases the alternative symbols have no substance in international standards and are not fully defined by the originators, users must confirm symbol equivalence. No liability will be assumed from the use of this guide.
Parameter
Data Sheet Symbol ITSP ID IGAS VD VFRM V(BO) VG VDRM VGKM VGK VGK(BO) VK CAK K1 K2 A G RJA
Alternative
Symbol IPP IR IRM IRG VR VRM VFP VSGL Vgate VGATE VS VMLG VMGL VGL VDGL VLG VGND/LINE Coff Tip Ring GND Gate Rth (j-a)
Alternative Parameter Peak pulse current Reverse leakage current LINE/GND Reverse leakage current GATE/LINE Reverse voltage LINE/GND Peak forward voltage LINE/GND Dynamic switching voltage GND/LINE GATE/GND voltage Maximum voltage LINE/GND Maximum voltage GATE/LINE GATE/LINE voltage Dynamic switching voltage GATE/LINE LINE/GND voltage Off-state capacitance LINE/GND Tip terminal Ring terminal Ground terminal Gate terminal Thermal Resistance, junction to ambient
Non-repetitive peak on -state pulse current Off-state current Gate reverse current (with A and K terminals connected) Off-state voltage Peak forward recovery voltage Breakover voltage Gate voltage, (VGG is gate supply voltage referenced to the A terminal) Repetitive peak off-state voltage Repetitive peak gate-cathode voltage Gate-cathode voltage Gate-cathode voltage at breakover Cathode-anode voltage Anode-cathode capacitance Cathode 1 terminal Cathode 2 terminal Anode terminal Gate terminal Thermal Resistance, junction to ambient
JULY 1995 -- REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
APPLICATIONS INFORMATION
Electrical Characteristics
The electrical characteristics of a thyristor overvoltage protector are strongly dependent on junction temperature, TJ. Hence a characteristic value will depend on the junction temperature at the instant of measurement. The values given in this data sheet were measured on commercial testers, which generally minimize the temperature rise caused by testing.
Application Circuit
Figure 3 shows a typical TISP61511D SLIC card protection circuit. The incoming line wires, R and T, connect to the relay matrix via the series overcurrent protection. Fusible resistors, fuses and positive temperature coefficient (PTC) resistors can be used for overcurrent protection. Resistors will reduce the prospective current from the surge generator for both the TISP61511D and the ring/test protector. The TISP7xxxF3 protector has the same protection voltage for any terminal pair. This protector is used when the ring generator configuration may be ground or battery-backed. For dedicated ground-backed ringing generators, the TISP3xxxF3 gives better protection as its inter-wire protection voltage is twice the wire to ground value. Relay contacts 3a and 3b connect the line wires to the SLIC via the TISP61511D protector. The protector gate reference voltage comes from the SLIC negative supply (VBAT). A 220 nF gate capacitor sources the high gate current pulses caused by fast rising impulses.
OVERCURRENT PROTECTION TIP WIRE R1a RING/TEST PROTECTION Th1 S1a Th3 S2a TEST RELAY RING RELAY SLIC RELAY S3a SLIC PROTECTOR Th4
SLIC
RING WIRE
R1b
Th2 TISP 3xxxF3 OR 7xxxF3 S3b S1b S2b
Th5 TISP 61511D VBAT 220 nF
TEST EQUIPMENT
RING GENERATOR
AI6XAA
Figure 3. Typical Application Circuit
Impulse Conditions
Most lightning tests, used for equipment verification, specify a unidirectional sawtooth waveform which has an exponential rise and an exponential decay. Wave shapes are classified in terms of Peak Amplitude (voltage or current), rise time and a decay time to 50 % of the maximum amplitude. The notation used for the wave shape is amplitude, rise time/decay time. A 38 A, 5/310 s wave shape would have a peak current value of 38 A, a rise time of 5 s and a decay time of 310 s. There are three categories of surge generator type; single wave shape, combination wave shape and circuit defined. Single wave shape generators have essentially the same waveshape for the open circuit voltage and short circuit current (e.g. 10/1000 s open circuit voltage and short circuit current). Combination generators have two wave shapes, one for the open circuit voltage and the other for the short circuit current (e.g. 1.2/50 s open circuit voltage and 8/20 s short circuit current). Circuit specified generators usually equate to a combination generator, although typically only the open circuit voltage waveshape is referenced (e.g. a 10/700 s open circuit voltage generator typically produces a 5/310 s short circuit current). If the combination or circuit defined generators operate into a finite resistance the wave shape produced is intermediate between the open circuit and short circuit values.
JULY 1995 -- REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
Impulse Conditions (Continued)
When the TISP switches into the on-state it has a very low impedance. As a result, although the surge wave shape may be defined in terms of open circuit voltage, it is the current waveshape that must be used to assess the TISP surge requirement. As an example, the CCITT IX K17 1.5 kV, 10/700 s surge is changed to a 38 A 5/310 s waveshape when driving into a short circuit. The impulse generators used for rated values are tabulated below
Impulse Generators used for Rated Values
Peak Voltage Standard TR-NWT-001089 ETS 300 047-1 RLM88/I3124 K17, K20, K21 TR-NWT-001089 Setting V 2500 3000 1600 1600 1000 Voltage Wave Form s 2/10 1.2/50 0.5/700 10/700 10/1000 Generator Fictive Source Impedance External Series Resistance Peak Current A 170 80 40 40 30 Current Wave Form s 2/10 0.6/18 0.2/310 5/310 10/1000
Y
5 38 40 40 10
Y
10 0 0 0 23
Figures 4. and 5. show how the TISP61511D limits negative and positive overvoltages. Negative overvoltages (Figure 4.) are initially clipped close to the SLIC negative supply rail value (VBAT). If sufficient current is available from the overvoltage, then the protector (Th5) will crowbar into a low voltage on-state condition. As the overvoltage subsides the high holding current of the crowbar prevents dc latchup. The protection voltage will be the sum of the gate supply (VBAT) and the peak gate-cathode voltage (VGK(BO)). The protection voltage will be increased if there is a long connection between the gate decoupling capacitor, C, and the gate terminal. During the initial rise of a fast impulse, the gate current (IG) is the same as the cathode current (IK ). Rates of 70 A/s can cause inductive voltages of 0.7 V in 2.5 cm of printed wiring track. To minimize this inductive voltage increase of protection voltage, the length of the capacitor to gate terminal tracking should be minimized. Inductive voltages in the protector cathode wiring can increase the protection voltage. These voltages can be minimized by routing the SLIC connection through the protector as shown in Figure 3.
SLIC PROTECTOR SLIC
SLIC PROTECTOR
SLIC
IK
Th5 TISP 61511D C 220 nF IG VBAT AI6XAB
IF
Th5 TISP 61511D VBAT 220 nF AI6XAC
Figure 4. Negative Overvoltage Condition
Figure 5. Positive Overvoltage Condition
Positive overvoltages (Figure 5.) are clipped to ground by forward conduction of the diode section in protector (Th5). Fast rising impulses will cause short term overshoots in forward voltage (VFRM). The thyristor protection voltage, (V(BO)) increases under lightning surge conditions due to thyristor regeneration time. This increase is dependent on the rate of current rise, di/dt, when the TISP is clamping the voltage in its breakdown region. The diode protection voltage, known as the forward recovery voltage, (VFRM ) is dependent on the rate of current rise, di/dt. An estimate of the circuit di/dt can be made from the surge generator voltage rate of rise, dv/dt, and the circuit resistance. The impulse generators used for characterizing the protection voltages are tabulated on the next page.
JULY 1995 -- REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISP61511D Gated Protectors
Impulse Generators used for Electrical Characteristic Values
Peak Voltage Standard TR-NWT-001089 ETS 300 047-1 K17, K20, K21 TR-NWT-001089 Setting V 2500 1500 1500 1000 Voltage Wave Form s 2/10 1.2/50 10/700 10/1000 Generator Fictive Source Impedance External Series Resistance Peak Current A 38 30 30 30 Di/dt(I) Initial Rate Of Rise A/s 40 70 14 8 Current Wave Form s 2/10 0.6/21 5/350 10/1000
Y
5 38 40 10
Y
61 12 10 23
"TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries.
JULY 1995 -- REVISED MARCH 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.

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